Tunneling magnetoresistance at up to 270 K in La0.8Sr0.2MnO3/SrTiO3/La0.8Sr0.2MnO3 junctions with 1.6-nm-thick barriers

被引：112

作者：

Obata, T ^{[1
]}

Manako, T ^{[1
]}

Shimakawa, Y ^{[1
]}

Kubo, Y ^{[1
]}

机构：

[1] NEC Corp Ltd, Fundamental Res Labs, Ibaraki, Osaka 3058501, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 02期

关键词：

D O I：

10.1063/1.123002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Magnetic tunneling junctions are fabricated from epitaxially grown La0.8Sr0.2MnO3/SrTiO3/La0.8Sr0.2MnO3 trilayers. A large tunneling magnetoresistance of 150% is observed for a junction with a thin barrier layer (1.6 nm) under a low switching field (<10 Oe) at 5 K. A small tunneling magnetoresistance is observed even at 270 K, which is close to the ferromagnetic Curie temperature (290 K) of the La0.8Sr0.2MnO3 film. The large magnetoresistance and high operating temperature are attributed to the sufficiently thin and uniform barrier layer of SrTiO3. (C) 1999 American Institute of Physics. [S0003-6951(99)01602-2].

引用

页码：290 / 292

页数：3

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