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Optimization of channel profiles for ultra-short MOSFETs by quantum simulation
被引：3
作者：
Fiegna, C
Abramo, A
机构：
来源：
IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996
|
1996年
关键词：
D O I：
10.1109/IEDM.1996.554104
中图分类号：
TM [电工技术];
TN [电子技术、通信技术];
学科分类号：
0808 ;
0809 ;
摘要：
In this paper, the self-consistent solution of 1-D Poisson and Schrodinger equations is performed on doping profiles suitable for the fabrication of advanced ultrashort n-MOSFETs. Different issues are considered and investigated, including quantum-induced threshold voltage shifts, low-field electron effective mobility and gate-to-channel capacitance. The reported results give indications for the optimization of n-MOS channel doping profiles. In addition, the more advanced double-gate structure is analyzed and the reasons for possible advantages over more conventional single-gate ones (either SOI- or bulk-type) are investigated.
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页码：815 / 818
页数：4
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