Diagnostics of "colossal" magnetoresistance manganite films by Raman spectroscopy

被引：49

作者：

Podobedov, VB ^{[1
]}

Romero, DB

Weber, A

Rice, JP

Schreekala, R

Rajeswari, M

Ramesh, R

Venkatesan, T

Drew, HD

机构：

[1] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA

[2] Russian Acad Sci, Inst Spect, Troitsk 142092, Moscow Region, Russia

[3] Univ Maryland, Dept Phys, College Pk, MD 20742 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 22期

关键词：

D O I：

10.1063/1.122723

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polarized Raman scattering by phonons is used to characterize thin films prepared by laser ablation of La1-xCaxMnO3 targets. It was found that, in the temperature range from 6 to 300 K, phonon spectra of La0.7Ca0.3MnO3 films exhibit observable differences from those in bulk materials (microcrystalline ceramics and single crystals). A significant difference was found in the spectra of "as-grown'' films compared to those annealed in oxygen at 800 degrees C. The observed Raman peaks and their linewidths exhibit an irregular temperature dependence near T-c. A correlation of Raman data with magnetization of the sample was also found. (C) 1998 American Institute of Physics. [S0003-6951(98)03048-4].

引用

页码：3217 / 3219

页数：3

共 16 条

[1] Influence of controlled oxygen vacancies on the magnetotransport and magnetostructural phenomena in La0.85Sr0.15MnO3-delta single crystals [J].

DeLeonGuevara, AM ;

Berthet, P ;

Berthon, J ;

Millot, F ;

Revcolevschi, A ;

Anane, A ;

Dupas, C ;

LeDang, K ;

Renard, JP ;

Veillet, P .

PHYSICAL REVIEW B, 1997, 56 (10) :6031-6035

[2] Phonon modes and metal-insulator transition in GaN crystals under pressure [J].

Falkovsky, LA ;

Knap, W ;

Chervin, JC ;

Wisniewski, P .

PHYSICAL REVIEW B, 1998, 57 (18) :11349-11355

[3] Material characteristics of perovskite manganese oxide thin films for bolometric applications [J].

Goyal, A ;

Rajeswari, M ;

Shreekala, R ;

Lofland, SE ;

Bhagat, SM ;

Boettcher, T ;

Kwon, C ;

Ramesh, R ;

Venkatesan, T .

APPLIED PHYSICS LETTERS, 1997, 71 (17) :2535-2537

[4] CMR films structure as a function of growth and processing [J].

Hawley, ME ;

Adams, CD ;

Arendt, PN ;

Brosha, EL ;

Garzon, FH ;

Houlton, RJ ;

Hundley, MF ;

Heffner, RH ;

Jia, QX ;

Neumeier, J ;

Wu, XD .

JOURNAL OF CRYSTAL GROWTH, 1997, 174 (1-4) :455-463

[5] LATTICE EFFECTS ON THE MAGNETORESISTANCE IN DOPED LAMNO3 [J].

HWANG, HY ;

CHEONG, SW ;

RADAELLI, PG ;

MAREZIO, M ;

BATLOGG, B .

PHYSICAL REVIEW LETTERS, 1995, 75 (05) :914-917

[6] DEPENDENCE OF GIANT MAGNETORESISTANCE ON OXYGEN STOICHIOMETRY AND MAGNETIZATION IN POLYCRYSTALLINE LA0.67BA0.33MNOZ [J].

JU, HL ;

GOPALAKRISHNAN, J ;

PENG, JL ;

LI, Q ;

XIONG, GC ;

VENKATESAN, T ;

GREENE, RL .

PHYSICAL REVIEW B, 1995, 51 (09) :6143-6146

[7] Ferromagnetism-induced reentrant structural transition and phase diagram of the lightly doped insulator La1-xSrxMnO3 (x<=0.17) [J].

Kawano, H ;

Kajimoto, R ;

Kubota, M ;

Yoshizawa, H .

PHYSICAL REVIEW B, 1996, 53 (22) :14709-14712

[8] Growth, structural characteristics and magnetoresistance in La-Ca-Mn-O thin films prepared by dc magnetron sputtering [J].

Li, KB ;

Qi, ZZ ;

Li, XJ ;

Zhu, JS ;

Zhang, YH .

THIN SOLID FILMS, 1997, 304 (1-2) :386-391

[9] Influence of oxygen stoichiometry on Raman phonon spectroscopy, lattice parameters and physical properties of La0.7Ca0.3MnO3 thin films [J].

Malde, N ;

de Silva, PSIPN ;

Hossain, AKMA ;

Cohen, LF ;

Thomas, KA ;

MacManus-Driscoll, JL ;

Mathur, ND ;

Blamire, MG .

SOLID STATE COMMUNICATIONS, 1998, 105 (10) :643-648

[10]

MILLIS AJ, UJNPUB

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