Ferromagnetism in a Cd1-xMnxTe double quantum well

被引:14
作者
Boselli, MA
Lima, ICD
Ghazali, A
机构
[1] Univ Estado Rio de Janeiro, Inst Fis, BR-22500013 Rio De Janeiro, Brazil
[2] Univ Paris 07, Phys Solides Grp, CNRS, UMR 7588, F-75251 Paris 05, France
[3] Univ Paris 06, Phys Solides Grp, CNRS, UMR 7588, F-75251 Paris 05, France
关键词
D O I
10.1063/1.369999
中图分类号
O59 [应用物理学];
学科分类号
摘要
The indirect exchange is treated for magnetic moments located in a thin semiconductor layer which is imbedded in the corresponding nonmagnetic quantum well host. The interaction is mediated by carriers provided by remote doping. The specific case of Cd1-xMnxTe is considered. A significant Curie-Weiss temperature is obtained for several possible arrangements of the magnetic layer and the quantum well widths, and the carrier (hole) density. We found a substantial contribution of virtual transitions involving continuum states for high enough carrier density. (C) 1999 American Institute of Physics. [S0021-8979(99)29808-8].
引用
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页码:5944 / 5946
页数:3
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