A ferromagnetic III-V semiconductor: (Ga,Mn)As

被引：183

作者：

Ohno, H ^{[1
]}

Matsukura, F ^{[1
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

SOLID STATE COMMUNICATIONS | 2001年 / 117卷 / 03期

基金：

日本学术振兴会;

关键词：

magnetically ordered materials; semiconductors; epitaxy; Galvano magnetic effects;

D O I：

10.1016/S0038-1098(00)00436-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Magnetic and transport properties of ferromagnetic III-V semiconductor (Ga,Mn)As, an alloy between GaAs and transition element Mn, are reviewed. Results of direct magnetization measurements and magnetic properties obtained from transport are presented and compared. Origin of ferromagnetism and the prospects of magnetic III-V semiconductors are discussed. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：179 / 186

页数：8

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