Periodically rippled graphene: Growth and spatially resolved electronic structure

被引：563

作者：

Vazquez de Parga, A. L. ^{[1
,2
]}

Calleja, F. ^{[1
,2
]}

Borca, B. ^{[1
,2
]}

Passeggi, M. C. G., Jr. ^{[3
]}

Hinarejos, J. J. ^{[1
,2
]}

Guinea, F. ^{[4
]}

Miranda, R. ^{[1
,2
,5
]}

机构：

[1] Autonomous Univ Madrid, Dept Fis Mat Condensada, Madrid 28049, Spain

[2] Autonomous Univ Madrid, Inst Nicolas Cabrera, Madrid 28049, Spain

[3] INTEC CONICET & UNL, Lab Superficies & Interfases, Santa Fe, Argentina

[4] Consejo Super Invest Cient, Inst Ciencia Mat, Madrid 28049, Spain

[5] Inst Madrileno Estudios Avanzados Nanociencia, Madrid 28049, Spain

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 100卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.100.056807

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We grow epitaxial graphene monolayers on Ru(0001) that cover uniformly the substrate over lateral distances larger than several microns. The weakly coupled graphene monolayer is periodically rippled and it shows charge inhomogeneities in the charge distribution. Real space measurements by scanning tunneling spectroscopy reveal the existence of electron pockets at the higher parts of the ripples, as predicted by a simple theoretical model. We also visualize the geometric and electronic structure of edges of graphene nanoislands.

引用

页数：4

共 24 条

[1] Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics [J].