On the glass formation in the semiconducting GeSe2-Sb2Se3-ZnTe, As2Se3-Sb2Se3-ZnSe and GeSe2-ZnTe-ZnSe systems

被引：10

作者：

Boycheva, SV ^{[1
]}

Vassilev, VS

Ivanova, ZG

机构：

[1] Univ Chem Technol & Met, Dept Semicond, BU-1756 Sofia, Bulgaria

[2] Bulgarian Acad Sci, Inst Solid State Phys, BU-1784 Sofia, Bulgaria

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1999年 / 32卷 / 04期

关键词：

D O I：

10.1088/0022-3727/32/4/023

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The glass-forming regions in the GeSe2-Sb2Se3-ZnTe, As2Se3-Sb2Se3-ZnSe and GeSe2-ZnTe-ZnSe chalcogenide systems have been determined. The temperatures of phase transformations (the glass transition, crystallization and melting), the density and the microhardness have been studied. The crystalline phases which can be formed in these glasses have been specified. The established correlation between the properties and the composition has been explained with respect to the specific roles of the compounds involved. The results obtained have been compared with those for the similar ternary GeSe2-Sb2Se3-ZnSe system.

引用

页码：529 / 532

页数：4

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