Defect engineering: design tools for solid state electrochemical devices

被引:22
作者
Tuller, HL [1 ]
机构
[1] MIT, Dept Mat Sci & Engn, Crystal Phys & Electrochem Lab, Cambridge, MA 02139 USA
关键词
defects; solid electrolytes; mixed conductors; micromachining fuel cells;
D O I
10.1016/S0013-4686(03)00352-9
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The interest in solid state electrochemical devices including sensors, fuel cells, batteries, oxygen permeation membranes, etc. has grown rapidly in recent years. Many of the same figures of merit apply to these different applications, the key ones being ionic conduction in solid electrolytes, mixed ionic-electronic conduction (MIEC) in electrodes and permeation membranes, and gas-solid reaction kinetics in sensors and fuel cells. Optimization of device performance often relies on the careful understanding and control of both ionic and electronic defects in the materials that make up the key device components. To date, most materials in use have been discovered serendipitously. A key focus of this paper is on the tools available to scientists and engineers to practice 'defect engineering' for the purpose of optimizing the performance of such materials. Dopants, controlled structural disorder, and interfaces are examined in relation to increasing the conductivity of solid electrolytes. The creation of defect bands is demonstrated as a means for introducing high levels of electronic conductivity into a solid electrolyte for the purpose of creating a mixed conductor and thereby a monolithic fuel cell structure. Dopants are also examined as a means of reducing losses in a high temperature resonant sensor platform. The control of microstructure, down to the nano-scale, is shown capable of inverting the predominant ionic to an electronic charge carrier and thereby markedly modifying electrical properties. Electrochemical bias and light are also discussed in terms of creating defects locally thereby providing means for micromachining a broad range of materials with precise dimensional control, low residual stress and controlled etch rates. (C) 2003 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:2879 / 2887
页数:9
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