Voltage tunable two-color infrared detection using semiconductor superlattices

被引：17

作者：

Majumdar, A ^{[1
]}

Choi, KK

Reno, JL

Tsui, DC

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[2] USA, Res Lab, Adelphi, MD 20783 USA

[3] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 25期

关键词：

D O I：

10.1063/1.1635981

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate a voltage tunable two-color quantum-well infrared photodetector (QWIP) that consists of multiple periods of two distinct AlGaAs/GaAs superlattices separated by AlGaAs blocking barriers on one side and heavily doped GaAs layers on the other side. The detection peak switches from 9.5 mum under large positive bias to 6 mum under negative bias. The background-limited temperature is 55 K for 9.5 mum detection and 80 K for 6 mum detection. We also demonstrate that the corrugated-QWIP geometry is suitable for coupling normally incident light into the detector. (C) 2003 American Institute of Physics.

引用

页码：5130 / 5132

页数：3

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