Fabrication of the low-resistive p-type ZnO by codoping method

被引：209

作者：

Joseph, M ^{[1
]}

Tabata, H ^{[1
]}

Saeki, H ^{[1
]}

Ueda, K ^{[1
]}

Kawai, T ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan

来源：

PHYSICA B-CONDENSED MATTER | 2001年 / 302卷

关键词：

p-type ZnO; II-VI compounds; non-equilibrium process; codoping;

D O I：

10.1016/S0921-4526(01)00419-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have demonstrated the possibility of growing p-type ZnO films by a pulsed laser deposition technique combined with plasma gas source. The p-type ZnO film has been fabricated by passing N2O gas through an electron cyclotron resonance (ECR) or RF plasma source. N-O gas is effective to prevent "O" vacancy from occurring and introduce "N" as an acceptor, at the same time. With Ca and N codoping technique, we have observed a room temperature resistivity of 0.5 Omega cm and a carrier concentration of 5 x 10(19)cm (3) in ZnO film on glass substrate. Two-step growth, with a thin ZnO template layer formed at high temperature, is quite effective to realize a well crystallized growth at low temperature. The observed p-type ZnO films will open the door for practical applications in various oxide electronic devices. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：140 / 148

页数：9

共 22 条

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