Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors

被引：993

作者：

Hu, PingAn ^{[1
]}

Wen, Zhenzhong ^{[1
]}

Wang, Lifeng ^{[1
]}

Tan, Pingheng ^{[2
]}

Xiao, Kai ^{[3
]}

机构：

[1] Harbin Inst Technol, Minist Educ, Key Lab Microsyst & Microstruct, 2 YiKuang St, Harbin 150080, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

[3] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA

来源：

ACS NANO | 2012年 / 6卷 / 07期

关键词：

gallium selenide; nanosheets; photodetectors; NANOWIRE; OXIDE; NANOBELTS; ARRAYS; MOS2;

D O I：

10.1021/nn300889c

中图分类号：

O6 [化学];

学科分类号：

070301 [无机化学];

摘要：

Two-dimensional (2D) semiconductor nanomaterials hold great promises for future electronics and optics. In this paper, a 2D nanosheets of ultrathin GaSe has been prepared by using mechanical cleavage and solvent exfoliation method. Single- and few-layer GaSe nanosheets are exfoliated on an SiO2/Si substrate and characterized by atomic force microscopy and Raman spectroscopy. Ultrathin GaSe-based photodetector shows a fast response of 0.02 s, high responsivity of 2.8 AW(-1) and high external quantum efficiency of 1367% at 254 nm, indicating that the two-dimensional nanostructure of GaSe is a new promising material for high performance photodetectors.

引用

收藏

页码：5988 / 5994

页数：7

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