Growth mechanism of superconducting MgB2 films prepared by various methods

被引：48

作者：

Zhai, HY ^{[1
]}

Christen, HM ^{[1
]}

Zhang, L ^{[1
]}

Paranthaman, A ^{[1
]}

Cantoni, C ^{[1
]}

Sales, BC ^{[1
]}

Fleming, PH ^{[1
]}

Christen, DK ^{[1
]}

Lowndes, DH ^{[1
]}

机构：

[1] Oak Ridge Natl Lab, Oak Ridge, TN 37931 USA

来源：

JOURNAL OF MATERIALS RESEARCH | 2001年 / 16卷 / 10期

关键词：

D O I：

10.1557/JMR.2001.0375

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The growth mechanisms of MgB2 films obtained by different methods on various substrates are comparably studied by transport measurements and scanning electron microscopy observations. The analyzed films include those prepared by ex situ postanneal with T-c0 similar to 38.8 K and those from in situ anneal with T-c0 similar to 24 K. It is clearly observed that the films obtained by the high-temperature reaction of e-beam evaporated B with Mg vapor are formed by the nucleation of independent MgB2 grains at the film surface, indicating that this approach may not be suitable to obtain epitaxial films. A significant oxygen contamination was also present in films obtained from pulsed-laser-deposition-grown precursors, which drag the T-c0 down to 24 K.

引用

页码：2759 / 2762

页数：4

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