c-erbB-2 sensing using AlGaN/GaN high electron mobility transistors for breast cancer detection

被引：72

作者：

Chen, K. H. ^{[1
]}

Kang, B. S. ^{[1
]}

Wang, H. T. ^{[1
]}

Lele, T. P. ^{[1
]}

Ren, F. ^{[1
]}

Wang, Y. L. ^{[2
]}

Chang, C. Y. ^{[2
]}

Pearton, S. J. ^{[2
]}

Dennis, D. M. ^{[3
]}

Johnson, J. W. ^{[4
]}

Rajagopal, P. ^{[4
]}

Roberts, J. C. ^{[4
]}

Piner, E. L. ^{[4
]}

Linthicum, K. J. ^{[4
]}

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[3] Univ Florida, Dept Anesthesiol, Gainesville, FL 32611 USA

[4] Nitronex Corp, Raleigh, NC 27606 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 19期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2926656

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Antibody-functionalized, Au-gated AlGaN/GaN high electron mobility transistors (HEMTs) were used to detect c-erbB-2, which is a breast cancer marker. The antibody was anchored to the gate area through immobilized thioglycolic acid. The AlGaN/GaN HEMT drain-source current showed a rapid response of less than 5 s when target c-erbB-2 antigen in a buffer at clinically relevant concentrations was added to the antibody-immobilized surface. We could detect a range of concentrations from 16.7 to 0.25 mu g/ml. These results clearly demonstrate the promise of portable electronic biological sensors based on AlGaN/GaN HEMTs for breast cancer screening. (C) 2008 American Institute of Physics.

引用

页数：3

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