Thermoelectric properties of co-doped n-type iron silicides prepared by mechanical alloying

被引：6

作者：

Min, BG ^{[1
]}

Shim, JD ^{[1
]}

Lee, DH ^{[1
]}

机构：

[1] Yonsei Univ, Sch Mat Sci & Engn, Seoul 120749, South Korea

来源：

XVII INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT 98 | 1998年

关键词：

D O I：

10.1109/ICT.1998.740400

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

N-type thermoelectrics of Go-doped iron silicide have been fabricated and studied. The Fe : Co ratio was kept constant at 0.95:0.05 to achieve a composition of (F0.95Co0.05)(x)Si-2, where two values of x were chosen: 0.9 and 0.8 to observe the dispersion effect of Si phase. For these, the mechanical alloying method for powdering and the pressure-resistance-sintering were employed. The sintering temperature, inherently controlling the size of dispersed Si phases, was varied from 760 degrees C to 880 degrees C. The sintered specimens of the present process showed a similar Seebeck coefficient (alpha approximate to -183 mu V/K) compared to the ordinary ingot powdering method. The electrical and thermal conductivities, however, decreased with the reduction in interspacing of Si phases. The figure of merit was increased to Z = 1.0 x 10(-4)/K, which was believed to be enhanced by the phonon scattering effect of the dispersed Si phases.

引用

页码：386 / 389

页数：4