Numerical analysis of substrate effect on turn-on characteristics of GaAs MESFET

被引：1

作者：

Horio, K ^{[1
]}

机构：

[1] Shibaura Inst Technol, Fac Syst Engn, Omiya, Saitama 3308570, Japan

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 04期

关键词：

D O I：

10.1049/el:19990198

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of substrate trap 'EL2' on the turn-on characteristics of GaAs MESFETs are studied through two-dimensional simulation. It is found that abnormal current overshoot and subsequent slow transients can be observed due to EL2 when the off-state gate voltage is strongly negative and electrons are also depleted in the substrate.

引用

页码：343 / 344

页数：2

共 6 条

[1] 2-DIMENSIONAL SIMULATIONS OF DRAIN-CURRENT TRANSIENTS IN GAAS-MESFETS WITH SEMIINSULATING SUBSTRATES COMPENSATED BY DEEP LEVELS [J].

HORIO, K ;

FUSEYA, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (08) :1340-1346

[2] NUMERICAL-SIMULATION OF GAAS-MESFETS ON THE SEMI-INSULATING SUBSTRATE COMPENSATED BY DEEP TRAPS [J].

HORIO, K ;

YANAI, H ;

IKOMA, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (11) :1778-1785

[3]

HORIO K, 1999, IEEE T ED, V46

[4]

KOHNO Y, 1994, P GAAS IC S, P263

[5] ANALYSIS OF SURFACE-STATE EFFECT ON GATE LAG PHENOMENA IN GAAS-MESFETS [J].

LO, SH ;

LEE, CP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (09) :1504-1512

[6]

Yeats R., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P842, DOI 10.1109/IEDM.1988.32942

← 1 →