Uniformity improvement in dc magnetron sputtering deposition on a large area substrate

被引:5
作者
Seino, T
Kawakubo, Y
Nakajima, K
Kamei, M
机构
[1] Hitachi Ltd, Power & Ind Syst R&D Div, Hitachi, Ibaraki 31912, Japan
[2] Hitachi Ltd, Kokubu Works, Hitachi, Ibaraki 316, Japan
关键词
D O I
10.1016/S0042-207X(98)00292-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Single-substrate transfer type sputtering systems have been used for deposition of electrode films in liquid crystal display (LCD) production process. in deposition on a large area substrate such as 550 mm x 650 mm thickness distribution has a feature of diagonal non-uniformity The differences of electron flow distances from a target to anodes are remarkable in a larger processing system, therefore plasma density in a race track discharge has non-uniformity. Electron suppressers consisting of electrically floating walls ave investigated in order to control local electron flow distances. On a 550 mm x 650 mm substrate, a film thickness uniformity is improved from +/-7.0% to +/-4.4% by use of electron suppressers. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:791 / 793
页数:3
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