As-grown superconducting MgB2 thin films prepared by molecular beam epitaxy

被引：175

作者：

Ueda, K ^{[1
]}

Naito, M ^{[1
]}

机构：

[1] NTT, Basic Res Labs, Kanagawa 2430198, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 13期

关键词：

D O I：

10.1063/1.1405421

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Superconducting thin films of magnesium diboride (MgB2) were prepared on various substrates [SrTiO3 (001), sapphire R, sapphire C and Si (111)] by molecular beam epitaxy. The growth temperature was examined in the ambient to 650 degreesC. Only films formed at temperatures between 150 and 320 degreesC showed superconductivity. The best T-C(onset) of 36 K with a sharp transition width of similar to1 K was observed. The T-C of the as-grown superconducting MgB2 thin films is close to the bulk value. (C) 2001 American Institute of Physics.

引用

页码：2046 / 2048

页数：3

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