Fullerenelike arrangements in carbon nitride thin films grown by direct ion beam sputtering -: art. no. 071901

被引:21
作者
Gago, R
Abrasonis, G
Mücklich, A
Möller, W
Czigány, Z
Radnóczi, G
机构
[1] Rossendorf Inc, Forschungszentrum Rossendorf EV, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany
[2] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary
关键词
D O I
10.1063/1.2008366
中图分类号
O59 [应用物理学];
学科分类号
摘要
Carbon nitride (CNx) thin films were grown by direct N-2/Ar ion beam sputtering of a graphite target at moderate substrate temperatures (300-750 K). The resulting microstructure of the films was studied by high-resolution transmission electron microscopy. The images showed the presence of curved basal planes in fullerenelike arrangements. The achievement and evolution of these microstructural features are discussed in terms of nitrogen incorporation, film-forming flux, and ion bombardment effects, thus adding to the understanding of the formation mechanisms of curved graphitic structures in CNx materials. (C) 2005 American Institute of Physics.
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