The modeling, characterization, and design of monolithic inductors for silicon RF IC's

被引：337

作者：

Long, JR ^{[1
]}

Copeland, MA ^{[1
]}

机构：

[1] CARLETON UNIV, DEPT ELECT, OTTAWA, ON K1S 5B6, CANADA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1997年 / 32卷 / 03期

基金：

加拿大自然科学与工程研究理事会;

关键词：

computer-aided design; HF analog integrated circuits; MMIC's; modeling; monolithic inductors; RFIC's; silicon integrated circuit technology;

D O I：

10.1109/4.557634

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The results of a comprehensive investigation into the characteristics and optimization of inductors fabricated with the top-level metal of a submicron silicon VLSI process are presented, A computer program which extracts a physics-based model of microstrip components that is suitable for circuit (SPICE) simulation has been used to evaluate the effect of variations in metallization, layout geometry, and substrate parameters upon monolithic inductor performance, Three-dimensional (3-D) numerical simulations and experimental measurements of inductors were also used to benchmark the model accuracy, It is shown in this work that low inductor Q is primarily due to the restrictions imposed by the thin interconnect metallization available in most very large scale integration (VLSI) technologies, and that computer optimization of the inductor layout can be used to achieve a 50% improvement in component Q-factor over unoptimized designs.

引用

页码：357 / 369

页数：13

共 33 条

[1] ELECTRON AND HOLE MOBILITIES IN SILICON AS A FUNCTION OF CONCENTRATION AND TEMPERATURE [J].