Interfacial electrostatic phenomena and capacitance-voltage characteristics of ultrathin polyimide Langmuir-Blodgett films

被引：21

作者：

Itoh, E

Iwamoto, M

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

[2] Shinshu Univ, Dept Elect & Elect Engn, Nagano 3808553, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 10期

关键词：

D O I：

10.1063/1.370538

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The capacitance-voltage (C-V) characteristics of ultrathin polyimide (PI) Langmuir-Blodgett (LB) films were examined with taking into account the interfacial electrostatic phenomena and the presence of the interfacial electric states at the metal/PI LB film interface. It was revealed that the apparent film thickness of metal/PI LB film/metal elements decreases due to the charge exchange at the metal/film interface. It was also shown that the current-voltage (I-V) characteristics of Au/PI LB film/Al elements were ruled by the electric field of an order of 10(8)-10(9) V/m built at the metal/film interface due to the excess charges transferred from metals into PI LB films. (C) 1999 American Institute of Physics. [S0021-8979(99)05810-7].

引用

页码：7239 / 7243

页数：5

共 12 条

[1] MOLECULAR-SOLID OF ZINC TETRAPHENYLPORPHYRIN AS A MODEL ORGANIC SEMICONDUCTOR WITH A WELL-DEFINED DEPLETION LAYER [J].