Temperature dependence of the optical energy band gap in CuIn3Se5 and CuGa3Se5

被引:36
作者
Rincón, C [1 ]
Wasim, SM [1 ]
Marín, G [1 ]
Molina, I [1 ]
机构
[1] Univ Los Andes, Ctr Estudios Semicond, Dept Fis, Fac Ciencias, Merida 5101, Venezuela
关键词
D O I
10.1063/1.1528305
中图分类号
O59 [应用物理学];
学科分类号
摘要
The temperature dependence of the optical band gap E-G in bulk crystals of CuIn3Se5 and CuGa3Se5 has been analyzed by separately considering the contributions due to electron-phonon interaction and thermal expansion. For the former contribution, we use an expression related to the mean frequency of phonons, defined by a temperature theta, that participate in the shift of the fundamental energy gap with temperature. For the latter, a term that explicitly takes into account the temperature variation of the thermal expansion coefficient and the pressure dependence of the band gap is employed. (C) 2003 American Institute of Physics.
引用
收藏
页码:780 / 782
页数:3
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