Advanced interconnect scheme analysis: Real impact of technological improvements

被引：4

作者：

Lecarval, G ^{[1
]}

Morand, Y ^{[1
]}

Roger, F ^{[1
]}

Rivallin, P ^{[1
]}

Poncet, D ^{[1
]}

机构：

[1] CEA, Technol Avancees, LETI, F-38054 Grenoble 09, France

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746485

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We analyse advanced scenarios for 0.13 mu m interconnect technology. This exhaustive study of all critical parameters, including process dispersion, is based on Design of Experiment and systematic simulation of Delay and Crosstalk. The simultaneous reductions of both parasitic effects are incompatible. The limited impact of technological evolutions will involve design solutions to significantly improve Crosstalk.

引用

页码：837 / 840

页数：4