Triangular gallium nitride nanorods

被引：60

作者：

Bae, SY

Seo, HW

Park, J ^{[1
]}

Yang, HN

Kim, H

Kim, S

机构：

[1] Korea Univ, Dept Chem, Jochiwon, South Korea

[2] Hanyang Univ, Coll Engn Sci, Ansan 425791, South Korea

[3] Korea Univ, Dept Elect Engn, Seoul 136701, South Korea

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 25期

关键词：

D O I：

10.1063/1.1583873

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Gallium nitride nanorods were synthesized by a chemical vapor deposition using the reaction of gallium/gallium nitride with ammonia. All nanorods have, exclusively, a triangle cross section with an average diameter of 50 nm. They consist of single-crystalline wurtzite structure crystal grown with the [010] direction. X-ray diffraction and Raman spectroscopy data suggest no shift of the lattice constants from those of the bulk. Temperature-dependent photoluminescence exhibits the I-2 and free-to-bound emission peaks. The present triangular gallium nitride nanorods would be free from the stress, having the band-gap energy of the bulk. (C) 2003 American Institute of Physics.

引用

页码：4564 / 4566

页数：3

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