Electrically rewritable memory cells from poly(3-hexylthiophene) Schottky diodes

被引：72

作者：

Smits, JHA

Meskers, SCJ

Janssen, RAJ

Marsman, AW

de Leeuw, DM

机构：

[1] Eindhoven Univ Technol, Mol Mat & Nanosyst, NL-5600 MB Eindhoven, Netherlands

[2] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

来源：

ADVANCED MATERIALS | 2005年 / 17卷 / 09期

关键词：

D O I：

10.1002/adma.200401534

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Rewritable plastic memory cells are made from polythiophene doped with inorganic salts and a plasticizer. The memory can be written and erased at +/- 6 V (see Figure) and read out is non-destructive. The retention time at zero bias is on the order of several minutes.

引用

收藏

页码：1169 / +

页数：6

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