Suppression of instabilities in 4H-SiC microwave MESFETs

被引：9

作者：

Hilton, KP ^{[1
]}

Uren, MJ ^{[1
]}

Hayes, DG ^{[1
]}

Wilding, PJ ^{[1
]}

Smith, BH ^{[1
]}

机构：

[1] Def Evaluat & Res Agcy, Malvern WR14 3PS, Worcs, England

来源：

8TH IEEE INTERNATIONAL SYMPOSIUM ON HIGH PERFORMANCE ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS | 2000年

关键词：

D O I：

10.1109/EDMO.2000.919031

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SiC MESFETs can be susceptible to trapping induced instabilities which reduce the performance of the device at CW compared to pulsed operation. We show that surface passivation and the use of a gate recess can dramatically reduce the scale of the problem.

引用

页码：67 / 70

页数：4

共 9 条

[1]

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[2]

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[3]

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[5]

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SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 :1247-1250

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