Device performance of light-emitting diode with poly(phenylenesulfidephenyleneamine) as a promotor of hole injection

被引:15
作者
Tak, YH
Bässler, H [1 ]
Leuninger, J
Müllen, K
机构
[1] Univ Marburg, Inst Phys Chem Kernchem & Makromol Chem, D-35032 Marburg, Germany
[2] Univ Marburg, Zentrum Mat Wissensch, D-35032 Marburg, Germany
[3] Max Planck Inst Polymerforsch, D-55021 Mainz, Germany
来源
JOURNAL OF PHYSICAL CHEMISTRY B | 1998年 / 102卷 / 25期
关键词
D O I
10.1021/jp981073w
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Charge carrier injection into and electroluminescence from single-layer, bilayer, and trilayer light-emitting diodes have been studied under cw and pulsed operation. The active materials were poly(phenylenesulfidephenyleneamine) (PPSA), poly(p-phenylphenylenevinylene) (PPPV), and a blend of oxadiazole and polystyrene. Owing to its low oxidation potential PPSA promotes hole injection from ITO into the emitting PPPV layer. The energy level structure of the trilayer assembly leads to an enhancement of electron injection owing to the accumulation of positive space charge and prevents sweep out of holes and electrons from the emitting PPPV layer. An external quantum efficiency of 1% has been measured with an aluminium cathode. Time-resolved electroluminescence studies yield information on the kinetics of charge carrier recombination.
引用
收藏
页码:4887 / 4891
页数:5
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