Maximum operating temperature of the 1.3 μm strained layer multiple quantum well InGaAsP lasers

被引：6

作者：

Smetona, S ^{[1
]}

Elenkrig, BB

Simmons, JG

Makino, T

Evans, JD

机构：

[1] McMaster Univ, Ctr Electrophot Mat & Devices, Hamilton, ON L8S 4L7, Canada

[2] Nortel Technol, Stn C, Ottawa, ON K1Y 4H7, Canada

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 08期

关键词：

D O I：

10.1063/1.368621

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on an experimental verification of a phenomenological model describing high-power and high-temperature operation of a compressively strained, InGaAsP multiple quantum well ridge-waveguide laser. The model, based on an assumption that mainly crystal heating defines optical output power saturation, has been proved to adequately describe the experimental results on maximum operating temperature of the lasers. (C) 1998 American Institute of Physics. [S0021-8979(98)01920-3].

引用

页码：4076 / 4078

页数：3

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