Surface and subsurface 1 keV electron stimulated reduction of sapphire studied by electron spectroscopy

被引:12
作者
Hoffman, A
Paterson, PJK
机构
[1] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,IL-32000 HAIFA,ISRAEL
[2] ROYAL MELBOURNE INST TECHNOL,DEPT APPL PHYS,MELBOURNE,VIC 3001,AUSTRALIA
关键词
D O I
10.1016/0169-4332(95)00346-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Electron irradiation may change the surface composition of solids by electron stimulated processes. In particular sapphire, alpha-Al2O3, is likely to be vulnerable to these processes because of the large difference in electronegativity between the cation and anion. In the present work the effect of 1 keV electron irradiation on the near surface composition of sapphire was studied. The use of the whole range of the electron spectrum produced by 1 keV primary electrons has provided a detailed picture of the variation with depth and electron dose of the surface and near surface of electron irradiated alpha-Al2O3(1000). Electron irradiation doses were in the range of 0.7 to 26 C/cm(2). After a dose of about 1 C/cm(2) sufficiently large clusters of aluminium were produced to allow the generation of the Al(LVV) 67 eV Auger peak, while after about 8 C/cm(2) the collective excitations surface and bulk plasmons were generated, An equilibrium in the composition of the first nanometre depth of the surface is reached after a dose of about 6 C/cm(2), with 50% of the aluminium in alumina being reduced to the metallic form, After a dose of about 13 C/cm(2), the composition of the first 2 nm reaches equilibrium, while deeper alumina continues to be reduced.
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页码:301 / 308
页数:8
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