Growth of highly oriented carbon nanotubes by plasma-enhanced hot filament chemical vapor deposition

被引:260
作者
Huang, ZP [1 ]
Wu, JW
Ren, ZF
Wang, JH
Siegal, MP
Provencio, PN
机构
[1] SUNY Buffalo, Dept Phys, Mat Synth Lab, Buffalo, NY 14260 USA
[2] SUNY Buffalo, Dept Chem, Mat Synth Lab, Buffalo, NY 14260 USA
[3] SUNY Buffalo, Ctr Adv Photon & Elect Mat, Buffalo, NY 14260 USA
[4] Sandia Natl Labs, Albuquerque, NM 87185 USA
关键词
D O I
10.1063/1.122912
中图分类号
O59 [应用物理学];
学科分类号
摘要
Highly oriented, multiwalled carbon nanotubes were grown on polished polycrystalline and single crystal nickel substrates by plasma enhanced hot filament chemical vapor deposition at temperatures below 666 degrees C. The carbon nanotubes range from 10 to 500 nm in diameter and 0.1 to 50 mu m in length depending on growth conditions. Acetylene is used as the carbon source for the growth of the carbon nanotubes and ammonia is used for dilution gas and catalysis. The plasma intensity, acetylene to ammonia gas ratio, and their flow rates, etc. affect the diameters and uniformity of the carbon nanotubes. (C) 1998 American Institute of Physics. [S0003-6951(98)01952-4].
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页码:3845 / 3847
页数:3
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