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Magnetotunneling spectroscopy of resonant tunneling diode using ferromagnetic (Ga,Mn)As

被引：11
作者：
Akiba, N
Matsukura, F
Ohno, Y
Shen, A
Ohtani, K
Sakon, T
Motokawa, M
Ohno, H
机构：
[1] Tohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
来源：
PHYSICA B-CONDENSED MATTER | 1998年 / 256卷
基金：
日本学术振兴会;
关键词：
magnetic semiconductor; (Ga; Mn)As; spin splitting; tunneling;
D O I：
10.1016/S0921-4526(98)00490-6
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Tunneling and magnetotunneling properties of GaAs-based p-type double barrier resonant tunneling diodes (RTD's) with a ferromagnetic (Ga,Mn)As emitter layer are studied. Current-voltage characteristics of RTD's revealed the presence of spontaneous magnetization in the (Ga,Mn)As emitter. The transverse magnetic field results suggest that the valence band dispersion of (Ga,Mn)As is different from GaAs. (C) 1998 Published by Elsevier Science B.V. All rights reserved.
引用
收藏
页码：561 / 564
页数：4
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