Hole states in wide band-gap diluted magnetic semiconductors and oxides

被引：75

作者：

Dietl, Tomasz ^{[1
,2
,3
]}

机构：

[1] Polish Acad Sci, Inst Phys, PL-02688 Warsaw, Poland

[2] Japan Sci & Technol Agcy, ERATO, Semicond Spintron Project, PL-02688 Warsaw, Poland

[3] Univ Warsaw, Inst Theoret Phys, PL-00681 Warsaw, Poland

来源：

PHYSICAL REVIEW B | 2008年 / 77卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.77.085208

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Puzzling disagreement between photoemission and optical findings in magnetically doped GaN and ZnO is explained within a generalized alloy theory. The strong coupling between valence-band holes and localized spins gives rise to a midgap Zhang-Rice-like state, to a sign reversal of the apparent p-d exchange integral, and to an increase of the band gap with the magnetic ion concentration.

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页数：6

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