Kinetic features of crystallization of cubic boron nitride single crystals in the BN-LiH(N, Se) system

We have investigated the effect of selenium additions on the kinetics of the degree and rate of hexagonal to cubic BN conversion (hBN --> cBN) as well as on the linear rate of the cBN crystal growth in the BN-LiH(N,Se) system. Experiments were performed in the temperature range 1840 to 2080 K at a pressure of 4.3 GPa. For 0.5, 1.0. and 3.0 mass% selenium addition, the activation energy of the process of cBN formation is found to be 45.0, 39.0, and 34.0 kJ/mol, respectively. The resulting crystals showed n-type conduction with a resistivity of 10(5) to 10(8) Omega cm and a dislocation density of 10(5) to 10(3) cm(-2).