Microstructure investigation of Fe/Al2O3/Fe tunneling junction

被引：24

作者：

Chen, H ^{[1
]}

Xu, QY ^{[1
]}

Ni, G ^{[1
]}

Lu, J ^{[1
]}

Sang, H ^{[1
]}

Zhang, SY ^{[1
]}

Du, YW ^{[1
]}

机构：

[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 08期

关键词：

D O I：

10.1063/1.369923

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A series of Fe/Al2O3/Fe tunneling junction samples were prepared by ion beam sputtering technique. After deposited, the Al layers in a series of samples were exposed to the air for 24-100 h to obtain Al2O3 layers (100 Angstrom) with different oxidation quality. A tunneling magnetoresistance (TMR) value of 5.89% was observed in the sample with the Al layer oxidized for 72 h. The I - V curve of this sample shows a nonlinear relationship, indicating the existence of well metal-insulator contact in the sample. The microstructures of these samples were analyzed by using x-ray photoelectron spectroscopy. The results show that good Al2O3 layers are formed in all samples, but there exists an interdiffusion interface between the Fe and Al2O3 (with Al metal inclusions) layer which greatly influences the TMR effect. (C) 1999 American Institute of Physics. [S0021-8979(99)36508-7].

引用

页码：5798 / 5800

页数：3

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[No title captured]

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