An analysis of program and erase operation for FC-SGT flash memory cells

被引：6

作者：

Hioki, M ^{[1
]}

Endoh, T ^{[1
]}

Sakuraba, H ^{[1
]}

Lenski, M ^{[1
]}

Masuoka, F ^{[1
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

2000 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 2000年

关键词：

D O I：

10.1109/SISPAD.2000.871221

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The floating channel type surrounding gate transistor (FC-SGT) Flash memory cell realises high-speed bipolarity program and erase operations. In the current investigation, the time dependence of the surface potential in the floating channel region, which strongly affects program and erase performance, is studied during program and erase operation. By analysing the carrier generation processes in floating channel region, the program and erase operation for FC-SGT Flash memory cell is made clear.

引用

页码：116 / 118

页数：3