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Pentacene thin film transistors fabricated on plastic substrates

被引：58
作者：
Lee, JH
Kim, SH [1 ]
Kim, GH
Lim, SC
Lee, H
Jang, J
Zyung, T
机构：
[1] Elect & Telecommun Res Inst, Basic Res Lab, Taejon 305350, South Korea
[2] Kyung Hee Univ, Informat Display Dept, Seoul 130701, South Korea
[3] Chungnam Natl Univ, Taejon 305764, South Korea
来源：
SYNTHETIC METALS | 2003年 / 139卷 / 02期
关键词：
OTFT; organic transistor; plastic substrate; gate dielectrics;
D O I：
10.1016/S0379-6779(03)00197-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this study, Organic thin film transistors (OTFT) was fabricated on polyethylene naphthalate (PEN) substrate employing An as source, drain, and gate electrodes. Double-layer of organic dielectrics, thermal curable acrylate polymer (JSS-362) and inorganic dielectrics, aluminum oxide (Al2O3) was used as gate dielectrics. The polymeric layer on PEN substrate showed smoother surface than that of PEN substrate. Little surface damage of JSS-362 layer was achieved by using off-axis sputtering apparatus during the inorganic dielectrics fabrication. From the electrical measurements, typical I-V characteristics of the thin film transistor (TFT) device were observed. The field-effect mobility mu was calculated to be 1.4 x 10(-2) cm(2) V-1 s(-1), while the threshold voltage V-T was about -7 V. The on/off ratio was above 103 when VG was scanned from -50 to +30 V. (C) 2003 Elsevier Science B.V. All rights reserved.
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收藏
页码：445 / 451
页数：7
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