Enhanced photocurrent in thin film TiO2 electrodes prepared by sol-gel method

被引:121
作者
Takahashi, M [1 ]
Tsukigi, K [1 ]
Uchino, T [1 ]
Yoko, T [1 ]
机构
[1] Kyoto Univ, Inst Chem Res, Kyoto 6110011, Japan
关键词
optoelectronic devices; photoconductivity; titanium oxide;
D O I
10.1016/S0040-6090(01)00811-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin film n-type TiO2 electrodes of different thickness from 10 to 540 nm were prepared by the sol-gel method so as to investigate the effects of the film thickness on the photocurrent. Since a steep band gradient is expected to form in the thin film TiO2 electrode with thickness less than the space charge layer, such steep band bending would effectively separate the photo-generated electrons and holes, leading to an increase in the photocurrent of the thin TiO2 film electrodes. It was found that in the range of 10-540 nm in thickness, the TiO2 film electrode of 70 nm thick showed a maximum photocurrent, which was approximately six times as large as that of the electrodes of 180-540-nm thickness. This result clearly indicates that the reduction of film thickness is effective for obtaining of the efficient n-type TiO2 film electrode. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:231 / 236
页数:6
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