Inhomogeneous exclusion processes with extended objects: The effect of defect locations

被引:77
作者
Dong, J. J. [1 ]
Schmittmann, B. [1 ]
Zia, R. K. P. [1 ]
机构
[1] Virginia Tech, Dept Phys, Ctr Stochast Proc Sci & Engn, Blacksburg, VA 24061 USA
来源
PHYSICAL REVIEW E | 2007年 / 76卷 / 05期
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevE.76.051113
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
We study the effects of local inhomogeneities, i.e., slow sites of hopping rate q < 1, in a totally asymmetric simple exclusion process for particles of size l >= 1 (in units of the lattice spacing). We compare the simulation results of l=1 and l>1 and notice that the existence of local defects has qualitatively similar effects on the steady state. We focus on the stationary current as well as the density profiles. If there is only a single slow site in the system, we observe a significant dependence of the current on the location of the slow site for both l=1 and l>1 cases. When two slow sites are introduced, more intriguing phenomena emerge, e.g., dramatic decreases in the current when the two are close together. In addition, we study the asymptotic behavior when q -> 0. We also explore the associated density profiles and compare our findings to an earlier study using a simple mean-field theory. We then outline the biological significance of these effects.
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页数:13
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