Pseudogaps, dopants, and strong disorder in cuprate high-temperature superconductors

被引：62

作者：

Phillips, JC ^{[1
]}

Saxena, A

Bishop, AR

机构：

[1] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA

[2] Los Alamos Natl Lab, Div Theoret, Los Alamos, NM 87545 USA

来源：

REPORTS ON PROGRESS IN PHYSICS | 2003年 / 66卷 / 12期

关键词：

D O I：

10.1088/0034-4885/66/12/R02

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Strong electronic nanoscale disorder is present in all cuprate high-temperature superconductors, interwoven with the microscopic mechanisms responsible for both the high superconductive transition temperatures and many normal state transport anomalies. Disorder is revealed most dramatically in high-resolution scanning tunnelling microscopy experiments, while its origins at the atomic level have been studied by several other techniques. The review reassesses the significance of many other 'mean field' experiments in the context of strong disorder, with emphasis on the effects of high-mobility dopants and long-range strain fields.

引用

页码：2111 / 2182

页数：72

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