Thermal stability of He irradiated photoresist films

被引：6

作者：

Garcia, ITS

Zawislak, FC ^{[1
]}

Samios, D

机构：

[1] UFRGS, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil

[2] UFRGS, Curso Pos Grad Ciencia Mat, Porto Alegre, RS, Brazil

[3] UFRGS, Inst Quim, Porto Alegre, RS, Brazil

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1999年 / 148卷 / 1-4期

关键词：

ion irradiation; photoresist; crosslinking; thermal stability; RBS; FTIR;

D O I：

10.1016/S0168-583X(98)00813-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In this contribution we investigate the thermal stability of irradiated AZ-1350J novolac-diazoquinone photoresist films, as a function of the fluence for 380 keV He ions in the range from 10(13) to 10(15) He cm(-2). The techniques of RES, NRA, ERDA, FTIR and solubility tests are used to study in detail the composition and chemical structure of the films before and after the irradiations, and after isothermal hear treatments at 350 degrees C during 6 h. Our results show that 10(15) He cm(-2) at 380 keV, transferring an average electronic energy density of 2.0 eV/Angstrom(3) to the whole volume of the photoresist, is sufficient to produce an effective crosslinking, without a significant damage to the polymer, and promoting a substantial improvement in the thermal stability of the photoresist at 350 degrees C. For lower fluences the films are not stable at this temperature. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：1111 / 1115

页数：5

共 7 条

[1] Degradation of polystyrene thin films under d, He-4 and C-12 irradiation studied by ion beam analysis: Effects of energy loss, sample thickness and isotopic content [J].