A study of wet oxidized A1xGa1-xAs for integrated optics

被引:9
作者
Bek, A [1 ]
Aydinli, A [1 ]
Champlain, JG [1 ]
Naone, R [1 ]
机构
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
基金
美国国家科学基金会;
关键词
integrated optics; optical waveguides; oxidation; polarization splitters;
D O I
10.1109/68.752540
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An investigation of wet oxidized Al-x Ga1-xAs layers in integrated optical applications is reported, Refractive index and thickness shrinkage of wet oxidized AI(x)Ga(1-x)As layers are measured using spectroscopic ellipsometry, A Cauchy fit to the refractive index is found in the wavelength range between 0.3 and 1.6 mu m. The refractive index at 1.55 mu m is found to be 1.66+/-0.01 with little dispersion around 1.55 mu m. Very low loss single-mode waveguides with metal electrodes showing very low polarization dependence of loss coefficient are fabricated using wet oxidized AlxGa1-xAs layers as upper cladding, Optical polarization splitters are also designed and fabricated from the same type of waveguides taking advantage of increased birefringence, Designs utilizing wet oxidized AlxGa1-xAs are compared with conventional designs using only compound semiconductor heterostructures.
引用
收藏
页码:436 / 438
页数:3
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