Correlation between the ionicity character and the heteropolar band gap in semiconductors

被引：42

作者：

Al-Douri, Y ^{[1
]}

Abid, H ^{[1
]}

Zaoui, A ^{[1
]}

Aourag, H ^{[1
]}

机构：

[1] Univ Sidi BelAbbes, Dept Phys, Computat Mat Sci Lab, Sidi BelAbbes 22000, Algeria

来源：

PHYSICA B | 2001年 / 301卷 / 3-4期

关键词：

ionicity; heteropolar band gap; semiconductors;

D O I：

10.1016/S0921-4526(01)00258-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The heteropolar band gaps between the first and second valence bands at the X-point are obtained by using empirical pseudopotential method (EPM) for tetrahedral bounded semiconductors. An ionicity scale is obtained that is in reasonable agreement with that of Phillips and other authors. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：295 / 298

页数：4

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