First principles modeling of magnetic random access memory devices (invited)

被引：28

作者：

Butler, WH

Zhang, XG

Schulthess, TC

Nicholson, DMC

Oparin, AB

MacLaren, JM

机构：

[1] Oak Ridge Natl Lab, Div Met & Ceram, Oak Ridge, TN 37831 USA

[2] Tulane Univ, Dept Phys, New Orleans, LA 70018 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 08期

关键词：

D O I：

10.1063/1.369933

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Giant magnetoresistance (GMR) and spin-dependent tunneling may be used to make magnetic random access memory devices. We have applied first-principles based electronic structure techniques to understand these effects and in the case of GMR to model the transport properties of the devices. (C) 1999 American Institute of Physics. [S0021-8979(99)77608-5].

引用

收藏

页码：5834 / 5839

页数：6

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