Plane-view transmission electron microscopy for advanced integrated circuit

被引：2

作者：

Liu, Pan ^{[1
]}

Li, K. ^{[1
]}

Er, Eddie ^{[1
]}

Zhao, Siping ^{[1
]}

机构：

[1] Chartered Semicond Mfg Ltd, Woodlands Ind Pk D,St 2, Singapore 738406, Singapore

来源：

2006 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS | 2006年

关键词：

D O I：

10.1109/SMELEC.2006.380709

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the authors try to introduce three techniques for plane-view TEM sample preparation. First, traditional plane-view TEM sample preparation will be introduced. The second technique is FIB-based lift-out method, which places the sample on the carbon film. This technique is used to cut isolated defects, such as SRAM single bit failure, but this technique introduces artifacts from FIB ion damage and carbon film. The last technique is a combination of tripod polishing, FIB milling and ion milling. Specific cases will be given to illustrate the application of these techniques.

引用

页码：630 / +

页数：2