Low threshold CW lasing of closely-stacked self-organized InAs/GaAs quantum dots

被引：11

作者：

Mukai, K ^{[1
]}

Nakata, Y ^{[1
]}

Shoji, H ^{[1
]}

Sugawara, M ^{[1
]}

Ohtsubo, K ^{[1
]}

Futatsugi, T ^{[1
]}

Sugiyama, Y ^{[1
]}

Yokoyama, N ^{[1
]}

Ishikawa, H ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ICIPRM.1998.712473

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We achieved low threshold CW lasing of a new type of self-organized dots. The dots have a columnar shape, and were fabricated using MBE by stacking closely the Stranski-Krastanov (SK) dot in growth direction with monolayer-thick intermediate layers. Uniformity was improved comparing to the single SK dots. The dot laser with cleaved facets operated at the threshold current of 31 mA at room temperature with current density of 250 A/cm(2) per a single dot layer.

引用

页码：345 / 348

页数：4