STM study of epitaxial Dy silicides on Si(111) and Si(001) using ultra-sharp tips prepared by ion bombardment

被引：9

作者：

Kalka, T ^{[1
]}

Preinesberger, C ^{[1
]}

Vandre, S ^{[1
]}

Dahne-Prietsch, M ^{[1
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1998年 / 66卷 / Suppl 1期

关键词：

D O I：

10.1007/s003390051300

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present an STM study on the epitaxial growth of Dy silicides on Si surfaces, using ultra-sharp tips prepared by ion bombardment. On Si(111), 100 Angstrom wide flat surfaces are observed, which form screw dislocations at thicker coverages. On Si(001), rectangular silicide islands are formed.

引用

页码：S1073 / S1075

页数：3

共 3 条

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[3] Growth and electronic structure of Dy silicide on Si(111) [J].

Vandre, S ;

Kalka, T ;

Preinesberger, C ;

Manke, I ;

Eisele, H ;

Dahne-Prietsch, M ;

Meier, R ;

Weschke, E ;

Kaindl, G .

APPLIED SURFACE SCIENCE, 1998, 123 :100-103

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