Resistive switching characteristics of NiO films deposited on top of W or Cu pillar bottom electrodes

被引：9

作者：

Dumas, C. ^{[1
]}

Deleruyelle, D. ^{[1
]}

Demolliens, A. ^{[1
]}

Muller, Ch. ^{[1
]}

Spiga, S. ^{[2
]}

Cianci, E. ^{[2
]}

Fanciulli, M. ^{[2
]}

Tortorelli, I. ^{[3
]}

Bez, R. ^{[3
]}

机构：

[1] Aix Marseille Univ, UMR CNRS 6242, Im2np, IMT Technopole Chateau Gombert, F-13451 Marseille 20, France

[2] IMM CNR, Lab MDM, I-20041 Agrate Brianza, Italy

[3] Numonyx Agrate, Technol Ctr R2, I-20041 Agrate Brianza, Italy

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 11期

关键词：

Resistive switching memory elements; Nickel oxide; Unipolar switching; Downscaling; Reliability; THIN-FILMS; RESET; RRAM; INTEGRATION; OXIDATION; MECHANISM; DEVICES; LAYER;

D O I：

10.1016/j.tsf.2010.12.244

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper demonstrates the feasibility of resistive switching memory elements integrating a nickel oxide film deposited on top of a pillar bottom electrode. The unipolar switching was investigated over a wide temperature range (25 to 125 degrees C) on samples integrating either W or Cu plugs with diameters ranging from 1 down to 0.18 mu m. The switching characteristics and scaling trends of various fabricated memory elements were compared to select the best bottom electrode contact. It was shown that NiO layers deposited on top of W-plugs exhibited the most satisfactory electrical characteristics for future high density memory devices. Their reliability performances in terms of endurance and retention were subsequently studied by using either quasi-static or pulse programming modes. Set operations with short (10 to 20 ns) and low amplitude (around 2 V) voltage pulses were also demonstrated. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：3798 / 3803

页数：6

共 28 条

[1] Self-annealing and aging effect characterization on copper seed thin films [J].

Brunoldi, G ;

Guerrieri, S ;

Alberici, SG ;

Ravizza, E ;

Tallarida, G ;

Wiemer, C ;

Marangon, T .

MICROELECTRONIC ENGINEERING, 2005, 82 (3-4) :289-295

[2]

Cagli C, 2008, INT EL DEVICES MEET, P301

[3] Oxidation kinetics of Ni metallic films: Formation of NiO-based resistive switching structures [J].

Courtade, L. ;

Turquat, Ch. ;

Muller, Ch. ;

Lisoni, J. G. ;

Goux, L. ;

Wouters, D. J. ;

Goguenheim, D. ;

Roussel, P. ;

Ortega, L. .

THIN SOLID FILMS, 2008, 516 (12) :4083-4092

[4] Integration of resistive switching NiO in small via structures from localized oxidation of nickel metallic layer [J].

Courtade, L. ;

Turquat, Ch. ;

Lisoni, J. G. ;

Goux, L. ;

Wouters, D. J. ;

Deleruyelle, D. ;

Muller, Ch. .

ESSDERC 2008: PROCEEDINGS OF THE 38TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2008, :218-+

[5] Electrical nanocharacterization of copper tetracyanoquinodimethane layers dedicated to resistive random access memories [J].

Deleruyelle, Damien ;

Muller, Christophe ;

Amouroux, Julien ;

Mueller, Robert .

APPLIED PHYSICS LETTERS, 2010, 96 (26)

[6]

DEMOLLIENS A, 2009, INT MEM WORKSH P 200, DOI DOI 10.1109/IMW.2009.5090606

[7] Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers [J].

Goux, L. ;

Lisoni, J. G. ;

Jurczak, M. ;

Wouters, D. J. ;

Courtade, L. ;

Muller, Ch. .

JOURNAL OF APPLIED PHYSICS, 2010, 107 (02)

[8]

GOUX L, 2009, INT MEM WORKSH P 200, DOI DOI 10.1109/IMW.2009.5090601

[9] Resistance transition in metal oxides induced by electronic threshold switching [J].

Ielmini, D. ;

Cagli, C. ;

Nardi, F. .

APPLIED PHYSICS LETTERS, 2009, 94 (06)

[10] Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories [J].

Ielmini, Daniele ;

Nardi, Federico ;

Cagli, Carlo .

APPLIED PHYSICS LETTERS, 2010, 96 (05)

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