Monte Carlo simulations for tilted-channel electron multipliers

被引:24
作者
Choi, YS [1 ]
Kim, JM [1 ]
机构
[1] Samsung Adv Inst Technol, Display Lab, Ctr Electron Emiss Source, NCRI, Suwon 440600, South Korea
关键词
electric fields; electron multiplier; Monte Carlo methods; secondary electron emission; simulation;
D O I
10.1109/16.842976
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Microchannel electron multipliers with tilted structures are simulated using the Monte Carlo method. Gains of secondary electrons are calculated for different structures of the electron multiplier For a short tilted cylindrical channel of the electron multiplier, a maximum gain is achieved greater than 10(4) at a tilt angle near 25 degrees, The maximum gain is about 10(3) times larger than that of the nontilted channel. An explanation for the improvement of gain in tilted channel is suggested.
引用
收藏
页码:1293 / 1296
页数:4
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