Low temperature PECVD polysilicon crystallization by rapid thermal processing

被引：2

作者：

Stewart, M ^{[1
]}

Hovagimian, H ^{[1
]}

Arakkal, J ^{[1
]}

Saha, S ^{[1
]}

Hatalis, MK ^{[1
]}

机构：

[1] Lehigh Univ, Display Res Lab, Bethlehem, PA 18015 USA

来源：

FLAT-PANEL DISPLAY MATERIALS-1998 | 1998年 / 508卷

关键词：

D O I：

10.1557/PROC-508-109

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work investigates the solid phase crystallization of PECVD amorphous silicon films by rapid thermal processing (RTP) as an alternative to laser crystallization. It is shown that PECVD films can be crystallized by RTP at temperatures compatible with glass substrates. A statistical design approach was used to investigate the effect of the various deposition and annealing conditions on the crystallization temperature, material properties and TFT device performance. The investigated variables include deposition temperature, rf power, pressure, surface treatments, dehydrogenation treatment, source gas, dilutant gas, and RTP scan speed. Important deposition and crystallization parameters will be discussed regarding polysilicon film optimization.

引用

页码：109 / 114

页数：6