Transition from self-organized InSb quantum-dots to quantum dashes

被引：50

作者：

Utzmeier, T

Postigo, PA

Tamayo, J

Garcia, R

Briones, F

机构：

[1] Inst. de Microelectronica de Madrid, CNM, CSIC, 28006 Madrid

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 18期

关键词：

D O I：

10.1063/1.117674

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have grown self-organized InSb quantum dots on semi-insulating InP (001) substrates by molecular beam epitaxy. We studied the size dependency of the uncapped InSb quantum dots on the nominal thickness of the deposited InSb by atomic force microscopy. The dot sizes have a pronounced minimum at about 2.2 monolayers of InSb. After a nominal thickness of 3.2 monolayers we observe a drastic change of the dot shape, from quantum dots to quantum dashes. From there on the dots grow in a quasicylindric shape aligned in the (110) direction. (C) 1996 American Institute of Physics.

引用

页码：2674 / 2676

页数：3

共 10 条

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[2]

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