Investigation of Ge component cells

被引:9
作者
Baur, C [1 ]
Meusel, M [1 ]
Dimroth, F [1 ]
Bett, AW [1 ]
机构
[1] Fraunhofer Inst Solar Energy Syst, D-79110 Freiburg, Germany
来源
CONFERENCE RECORD OF THE THIRTY-FIRST IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2005 | 2005年
关键词
D O I
10.1109/PVSC.2005.1488221
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
In this paper we investigate germanium (Ge) component cells with respect to their suitability as test structures for irradiation experiments and as reference cells. It will be demonstrated by means of spectral response measurements that Ge component cells do not exhibit the same behavior as a Ge subcell in the complete triple-junction (3J) device. Photon recycling from upper layers (GaInP, GaInAs) results in large signals in shorter wavelength regions. This leads to a higher photocurrent in the Ge component cell compared to the Ge subcell. In this paper it will be shown that this effect places restrictions on the suitability of Ge component cells for the above mentioned purposes. Possible solutions for each of the mentioned applications of Ge component cells are presented.
引用
收藏
页码:675 / 678
页数:4
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